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FDU3580

N-CHANNEL POWER MOSFET

Manufacturer: Rochester Electronics, LLC
Origchip NO: 699-FDU3580
Package: TO-251-3 Short Leads, IPak, TO-251AA
Datasheet: PDF
Stock: 817
Description: N-CHANNEL POWER MOSFET (Kg)

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Shipping Cost

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Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Packaging	Tube
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	MATTE TIN
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT APPLICABLE
Time@Peak Reflow Temperature-Max (s)	NOT APPLICABLE
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	COMMERCIAL
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	3.8W Ta 42W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	29m Ω @ 7.7A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1.76pF @ 40V
Current - Continuous Drain (Id) @ 25°C	7.7A Ta
Gate Charge (Qg) (Max) @ Vgs	79nC @ 10V
Drain to Source Voltage (Vdss)	80V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	7.7A
Drain-source On Resistance-Max	0.029Ohm
Pulsed Drain Current-Max (IDM)	50A
DS Breakdown Voltage-Min	80V
Avalanche Energy Rating (Eas)	245 mJ
RoHS Status	ROHS3 Compliant
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ