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FDG6332C-F085

Dual N & P-Channel 20 V 300 mOhm 1.5 nC PowerTrench Mosfet - SC-70-6

Manufacturer: ON Semiconductor
Origchip NO: 598-FDG6332C-F085
Package: 6-TSSOP, SC-88, SOT-363
Datasheet: PDF
Stock: 255
Description: Dual N & P-Channel 20 V 300 mOhm 1.5 nC PowerTrench Mosfet - SC-70-6 (Kg)

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Details

Tags

Parameters
Factory Lead Time	42 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Series	Automotive, AEC-Q101, PowerTrench®
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Subcategory	Other Transistors
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-G6
Qualification Status	Not Qualified
Number of Elements	2
Number of Channels	2
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300mW
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	300m Ω @ 700mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	113pF @ 10V
Current - Continuous Drain (Id) @ 25°C	700mA 600mA
Gate Charge (Qg) (Max) @ Vgs	1.5nC @ 4.5V
Drain to Source Voltage (Vdss)	20V
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	0.7A
Drain-source On Resistance-Max	0.3Ohm
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Height	1.1mm
RoHS Status	ROHS3 Compliant