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FDG6321C

FDG6321C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi

Manufacturer: ON Semiconductor
Origchip NO: 598-FDG6321C
Package: 6-TSSOP, SC-88, SOT-363
Datasheet: PDF
Stock: 551
Description: FDG6321C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Weight	28mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Resistance	450mOhm
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	Other Transistors
Max Power Dissipation	300mW
Terminal Form	GULL WING
Current Rating	500mA
Number of Elements	2
Element Configuration	Dual
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300mW
FET Type	N and P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	450m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 10V
Current - Continuous Drain (Id) @ 25°C	500mA 410mA
Gate Charge (Qg) (Max) @ Vgs	2.3nC @ 4.5V
Rise Time	8ns
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Fall Time (Typ)	8 ns
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	500mA
Threshold Voltage	800mV
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	0.5A
Drain to Source Breakdown Voltage	25V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj)	150°C
FET Feature	Logic Level Gate
Height	1.1mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free