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FDD3690

FDD3690 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi

Manufacturer: ON Semiconductor
Origchip NO: 598-FDD3690
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet: PDF
Stock: 902
Description: FDD3690 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	260.37mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Current Rating	22A
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	3.8W Ta 60W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	60W
Case Connection	DRAIN
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	64m Ω @ 5.4A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1514pF @ 50V
Current - Continuous Drain (Id) @ 25°C	22A Tc
Gate Charge (Qg) (Max) @ Vgs	39nC @ 10V
Rise Time	6.5ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	29 ns
Continuous Drain Current (ID)	22A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.064Ohm
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	75A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free