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FD900R12IP4D

INFINEON FD900R12IP4DIGBT Array & Module Transistor, High Power, N Channel, 900 A, 1.7 V, 5.1 kW, 1.2 kV, Module

Manufacturer: Infineon
Origchip NO: 9152-FD900R12IP4D
Package: Module
Datasheet: PDF
Stock: 771
Description: INFINEON FD900R12IP4DIGBT Array & Module Transistor, High Power, N Channel, 900 A, 1.7 V, 5.1 kW, 1.2 kV, Module (Kg)

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Details

Tags

Parameters
Mount	Screw
Package / Case	Module
Number of Pins	10
Pbfree Code	yes
Moisture Sensitivity Level (MSL)	1
Number of Terminations	8
ECCN Code	EAR99
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Subcategory	Insulated Gate BIP Transistors
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	R-XUFM-X8
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	5.1kW
Element Configuration	Single
Case Connection	ISOLATED
Transistor Application	POWER CONTROL
Halogen Free	Not Halogen Free
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	900A
Collector Emitter Breakdown Voltage	1.2kV
Collector Emitter Saturation Voltage	1.7V
Turn On Time	370 ns
Turn Off Time-Nom (toff)	1300 ns
Gate-Emitter Voltage-Max	20V
VCEsat-Max	2.05 V
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Contains Lead