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F3L400R07ME4B23BOSA1

IGBT MOD 650V 450A 1150W

Manufacturer: Infineon Technologies
Origchip NO: 376-F3L400R07ME4B23BOSA1
Package: Module
Datasheet: PDF
Stock: 943
Description: IGBT MOD 650V 450A 1150W (Kg)

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time	16 Weeks
Mounting Type	Chassis Mount
Package / Case	Module
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C
Published	2002
Part Status	Active
Moisture Sensitivity Level (MSL)	Not Applicable
Number of Terminations	11
ECCN Code	EAR99
Additional Feature	UL APPROVED
Subcategory	Insulated Gate BIP Transistors
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-XUFM-X11
Number of Elements	2
Configuration	2 Independent
Case Connection	ISOLATED
Power - Max	1150W
Transistor Application	POWER CONTROL
Halogen Free	Not Halogen Free
Polarity/Channel Type	N-CHANNEL
Input	Standard
Current - Collector Cutoff (Max)	1mA
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	450A
Power Dissipation-Max (Abs)	1150W
Turn On Time	260 ns
Vce(on) (Max) @ Vge, Ic	1.95V @ 15V, 400A
Turn Off Time-Nom (toff)	758 ns
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	26nF @ 25V
VCEsat-Max	1.95 V
RoHS Status	RoHS Compliant
Lead Free	Contains Lead