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EMD62T2R

TRANS NPN/PNP PREBIAS 0.15W EMT6

Manufacturer: ROHM Semiconductor
Origchip NO: 687-EMD62T2R
Package: SOT-563, SOT-666
Datasheet: -
Stock: 126
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6 (Kg)

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Factory Lead Time	10 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Transistor Element Material	SILICON
Packaging	Cut Tape (CT)
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Max Power Dissipation	150mW
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-F6
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power - Max	150mW
Transistor Application	SWITCHING
Polarity/Channel Type	NPN AND PNP
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)	150mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA 10V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	150mV @ 500μA, 5mA
Collector Emitter Breakdown Voltage	50V
Transition Frequency	250MHz
Max Breakdown Voltage	50V
Frequency - Transition	250MHz
Resistor - Base (R1)	47k Ω
Resistor - Emitter Base (R2)	47k Ω
RoHS Status	ROHS3 Compliant