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DMB53D0UDW-7

MOSFET N-CHANNEL NPN ENHANCEMENT MODE

Manufacturer: Diodes Incorporated
Origchip NO: 233-DMB53D0UDW-7
Package: 6-TSSOP, SC-88, SOT-363
Datasheet: PDF
Stock: 150
Description: MOSFET N-CHANNEL NPN ENHANCEMENT MODE (Kg)

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IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Factory Lead Time	18 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Weight	6.010099mg
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Applications	General Purpose
Voltage - Rated	45V NPN 50V N-Channel
Additional Feature	HIGH RELIABILITY
Subcategory	Other Transistors
Current Rating (Amps)	100mA PNP 160mA N-Channel
Max Power Dissipation	250mW
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	160mA
Time@Peak Reflow Temperature-Max (s)	40
Base Part Number	DMB53D0U
Pin Count	6
Qualification Status	Not Qualified
Number of Elements	1
Number of Channels	1
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Transistor Application	SWITCHING
Drain to Source Voltage (Vdss)	50V
Transistor Type	NPN, N-Channel
Continuous Drain Current (ID)	160mA
Gate to Source Voltage (Vgs)	12V
FET Technology	METAL-OXIDE SEMICONDUCTOR
DC Current Gain-Min (hFE)	200
Drain to Source Resistance	5Ohm
VCEsat-Max	0.3 V
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free