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CSD13202Q2

CSD13202Q2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from NA stock available at Feilidi

Manufacturer:
Origchip NO: 815-CSD13202Q2
Package: 6-VDFN Exposed Pad
Datasheet: -
Stock: 274
Description: CSD13202Q2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from NA stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-VDFN Exposed Pad
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	CSD13302
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.7W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.7W
Case Connection	DRAIN
Turn On Delay Time	4.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9.3m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	997pF @ 6V
Current - Continuous Drain (Id) @ 25°C	22A Ta
Gate Charge (Qg) (Max) @ Vgs	6.6nC @ 4.5V
Rise Time	28ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	13.6 ns
Turn-Off Delay Time	11 ns
Continuous Drain Current (ID)	22A
Threshold Voltage	800mV
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	12V
Avalanche Energy Rating (Eas)	20 mJ
Length	2mm
Width	2mm
Thickness	750μm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free