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CNY65EXI

VISHAY SEMICONDUCTOR CNY65EXI Transistor Output Optocoupler, 1, 11.6 kV, 50 %, 75 mA, DIP, 4


  • Manufacturer: Vishay Semiconductor Opto Division
  • Origchip NO: 879-CNY65EXI
  • Package: 4-DIP (0.300, 7.62mm)
  • Datasheet: PDF
  • Stock: 394
  • Description: VISHAY SEMICONDUCTOR CNY65EXI Transistor Output Optocoupler, 1, 11.6 kV, 50 %, 75 mA, DIP, 4 (Kg)

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Details

Tags

Parameters
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Number of Pins 4
Supplier Device Package 4-DIP
Operating Temperature -55°C~100°C
Packaging Tube
Published 1999
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 85°C
Min Operating Temperature -55°C
Voltage - Rated DC 1.25V
Max Power Dissipation 250mW
Voltage - Isolation 11600VDC
Output Voltage 32V
Output Type Transistor
Number of Elements 1
Number of Channels 1
Power Dissipation 250mW
Voltage - Forward (Vf) (Typ) 1.25V
Input Type DC
Forward Current 75mA
Max Output Voltage 32V
Output Current per Channel 50mA
Rise Time 2.4μs
Forward Voltage 1.6V
Fall Time (Typ) 2.4 μs
Collector Emitter Voltage (VCEO) 32V
Max Collector Current 50mA
Collector Emitter Breakdown Voltage 32V
Rise / Fall Time (Typ) 2.4μs 2.4μs
Current - Output / Channel 50mA
Reverse Breakdown Voltage 5V
Voltage - Output (Max) 32V
Max Input Current 75mA
Collector Emitter Saturation Voltage 300mV
Current - DC Forward (If) (Max) 75mA
Current Transfer Ratio (Min) 50% @ 5mA
Input Current 75mA
Current Transfer Ratio (Max) 300% @ 5mA
Turn On / Turn Off Time (Typ) 5μs, 3μs
Vce Saturation (Max) 300mV
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet
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