All Products

View All >>

BUK9Y153-100E,115

Mosfet Transistor, N Channel, 9.4 A, 100 V, 0.117 Ohm, 10 V, 1.7 V Rohs Compliant: Yes

Manufacturer: Nexperia USA Inc.
Origchip NO: 554-BUK9Y153-100E,115
Package: SC-100, SOT-669
Datasheet: PDF
Stock: 927
Description: Mosfet Transistor, N Channel, 9.4 A, 100 V, 0.117 Ohm, 10 V, 1.7 V Rohs Compliant: Yes (Kg)

Purchase & Inquiry

Transport

Purchase

You may place an order without registering to XINJIADA.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	6 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	146m Ω @ 2A, 10V
Vgs(th) (Max) @ Id	2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	716pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9.4A Tc
Gate Charge (Qg) (Max) @ Vgs	6.8nC @ 5V
Rise Time	10.9ns
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±10V
Fall Time (Typ)	7.9 ns
Turn-Off Delay Time	10 ns
Continuous Drain Current (ID)	9.4A
JEDEC-95 Code	MO-235
Gate to Source Voltage (Vgs)	15V
Max Dual Supply Voltage	100V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	38A
Avalanche Energy Rating (Eas)	9.5 mJ
RoHS Status	ROHS3 Compliant
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	SC-100, SOT-669
Surface Mount	YES
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	Automotive, AEC-Q101, TrenchMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Reach Compliance Code	not_compliant
Time@Peak Reflow Temperature-Max (s)	30
Pin Count	4
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	37W Tc