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BUK9614-60E,118

MOSFET N-CH 60V 56A D2PAK


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-BUK9614-60E,118
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 275
  • Description: MOSFET N-CH 60V 56A D2PAK (Kg)

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Details

Tags

Parameters
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 96W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 16.9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12.8m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2651pF @ 25V
Current - Continuous Drain (Id) @ 25°C 56A Tc
Factory Lead Time 12 Weeks
Gate Charge (Qg) (Max) @ Vgs 20.5nC @ 5V
Contact Plating Tin
Rise Time 22.4ns
Mounting Type Surface Mount
Drive Voltage (Max Rds On,Min Rds On) 5V
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Vgs (Max) ±10V
Fall Time (Typ) 22.9 ns
Surface Mount YES
Turn-Off Delay Time 35.7 ns
Number of Pins 3
Continuous Drain Current (ID) 56A
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Gate to Source Voltage (Vgs) 15V
Packaging Tape & Reel (TR)
Max Dual Supply Voltage 60V
Drain to Source Breakdown Voltage 60V
Published 2015
Series Automotive, AEC-Q101, TrenchMOS™
Pulsed Drain Current-Max (IDM) 224A
JESD-609 Code e3
RoHS Status ROHS3 Compliant
Part Status Active
See Relate Datesheet
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