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BPW85B

Phototransistors NPN Phototransistor 70V 100mW 850nm

Manufacturer: Vishay Semiconductor Opto Division
Origchip NO: 879-BPW85B
Package: Radial
Datasheet: PDF
Stock: 408
Description: Phototransistors NPN Phototransistor 70V 100mW 850nm (Kg)

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.
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Details

Tags

Parameters
Height	4.5mm
Length	3.4mm
Width	3.4mm
Radiation Hardening	No
REACH SVHC	Unknown
RoHS Status	ROHS3 Compliant
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	Radial
Number of Pins	2
Operating Temperature	-40°C~100°C TA
Packaging	Bulk
Published	2001
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	100°C
Min Operating Temperature	-40°C
Max Power Dissipation	100mW
Orientation	Top View
Current Rating	50mA
Number of Elements	1
Polarity	NPN
Number of Channels	1
Power Dissipation	100mW
Viewing Angle	50°
Power - Max	100mW
Lens Style	Clear, Domed
Rise Time	2μs
Fall Time (Typ)	2.3 μs
Collector Emitter Voltage (VCEO)	70V
Max Collector Current	50mA
Collector Emitter Breakdown Voltage	70V
Lens Color	Clear
Power Consumption	100mW
Voltage - Collector Emitter Breakdown (Max)	70V
Current - Collector (Ic) (Max)	100mA
Wavelength	850nm
Collector Emitter Saturation Voltage	300mV
Dark Current	200nA
Current - Dark (Id) (Max)	200nA