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BC858BWT1G

BC858BWT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi

Manufacturer: ON Semiconductor
Origchip NO: 598-BC858BWT1G
Package: SC-70, SOT-323
Datasheet: PDF
Stock: 152
Description: BC858BWT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Voltage - Rated DC	-30V
Max Power Dissipation	150mW
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-100mA
Frequency	100MHz
Time@Peak Reflow Temperature-Max (s)	40
Base Part Number	BC85**W
Pin Count	3
Number of Elements	1
Element Configuration	Single
Power Dissipation	150mW
Transistor Application	AMPLIFIER
Gain Bandwidth Product	100MHz
Polarity/Channel Type	PNP
Transistor Type	PNP
Collector Emitter Voltage (VCEO)	30V
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	220 @ 2mA 5V
Current - Collector Cutoff (Max)	15nA ICBO
Vce Saturation (Max) @ Ib, Ic	650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage	30V
Transition Frequency	100MHz
Collector Emitter Saturation Voltage	-650mV
Collector Base Voltage (VCBO)	30V
Emitter Base Voltage (VEBO)	5V
hFE Min	150
Height	900μm
Length	2.2mm
Width	1.35mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free