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BAP55LX,315

BAP55LX,315 datasheet pdf and Diodes - RF product details from NXP USA Inc. stock available at Feilidi

Manufacturer: NXP USA Inc.
Origchip NO: 568-BAP55LX,315
Package: 2-XDFN
Datasheet: PDF
Stock: 923
Description: BAP55LX,315 datasheet pdf and Diodes - RF product details from NXP USA Inc. stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time	16 Weeks
Package / Case	2-XDFN
Surface Mount	YES
Diode Element Material	SILICON
Operating Temperature	-65°C~150°C TJ
Packaging	Tape & Reel (TR)
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
HTS Code	8541.10.00.70
Subcategory	PIN Diodes
Technology	POSITIVE-INTRINSIC-NEGATIVE
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	BAP55
Pin Count	2
JESD-30 Code	R-PDSO-N2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	135mW
Diode Type	PIN - Single
Application	ATTENUATOR; SWITCHING
Current - Max	100mA
Capacitance @ Vr, F	0.28pF @ 20V 1MHz
Voltage - Peak Reverse (Max)	50V
Breakdown Voltage-Min	50V
Reverse Test Voltage	20V
Frequency Band	S B
Diode Capacitance-Nom	0.28pF
Resistance @ If, F	800mOhm @ 100mA 100MHz
Diode Capacitance-Max	0.28pF
Minority Carrier Lifetime-Nom	0.27 µs
Diode Res Test Current	0.5mA
Diode Res Test Frequency	100MHz
Diode Forward Resistance-Max	4.5Ohm
RoHS Status	ROHS3 Compliant