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AUIRGS30B60KTRL

AUIRGS30B60KTRL datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi

Manufacturer: Infineon Technologies
Origchip NO: 376-AUIRGS30B60KTRL
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet: PDF
Stock: 373
Description: AUIRGS30B60KTRL datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time	9 Weeks
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2004
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	Insulated Gate BIP Transistors
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Rise Time-Max	39ns
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	370W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	78A
Power Dissipation-Max (Abs)	370W
Turn On Time	74 ns
Test Condition	400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.35V @ 15V, 30A
Turn Off Time-Nom (toff)	237 ns
IGBT Type	NPT
Gate Charge	102nC
Current - Collector Pulsed (Icm)	120A
Td (on/off) @ 25°C	46ns/185ns
Switching Energy	350μJ (on), 825μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
Fall Time-Max (tf)	42ns
RoHS Status	ROHS3 Compliant