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AUIRGP50B60PD1

AUIRGP50B60PD1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi

Manufacturer: Infineon Technologies
Origchip NO: 376-AUIRGP50B60PD1
Package: TO-247-3
Datasheet: PDF
Stock: 406
Description: AUIRGP50B60PD1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	390W
Number of Elements	1
Rise Time-Max	15ns
Element Configuration	Single
Power Dissipation	390W
Input Type	Standard
Turn On Delay Time	40 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	150 ns
Collector Emitter Voltage (VCEO)	2.85V
Max Collector Current	75A
Reverse Recovery Time	42 ns
JEDEC-95 Code	TO-247AC
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.35V
Turn On Time	39 ns
Test Condition	390V, 33A, 3.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.85V @ 15V, 50A
Turn Off Time-Nom (toff)	161 ns
IGBT Type	NPT
Gate Charge	205nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	30ns/130ns
Switching Energy	255μJ (on), 375μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Fall Time-Max (tf)	15ns
Height	20.7mm
Length	15.87mm
Width	5.31mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free