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AUIRFB4610

MOSFET N-CH 100V 73A TO220AB

Manufacturer: Infineon Technologies
Origchip NO: 376-AUIRFB4610
Package: TO-220-3
Datasheet: PDF
Stock: 498
Description: MOSFET N-CH 100V 73A TO220AB (Kg)

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Details

Tags

Parameters
Factory Lead Time	11 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2000
Series	HEXFET®
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	190W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	190W
Case Connection	DRAIN
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	14m Ω @ 44A, 10V
Vgs(th) (Max) @ Id	4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	3550pF @ 50V
Current - Continuous Drain (Id) @ 25°C	73A Tc
Gate Charge (Qg) (Max) @ Vgs	140nC @ 10V
Rise Time	87ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	70 ns
Turn-Off Delay Time	53 ns
Continuous Drain Current (ID)	73A
Threshold Voltage	2V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	290A
Nominal Vgs	2 V
Height	16.51mm
Length	10.66mm
Width	4.82mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant