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AUIRF3205Z

AUIRF3205Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi

Manufacturer: Infineon Technologies
Origchip NO: 376-AUIRF3205Z
Package: TO-220-3
Datasheet: PDF
Stock: 357
Description: AUIRF3205Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

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Details

Tags

Parameters
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2010
Series	HEXFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	170W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	170W
Case Connection	DRAIN
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6.5m Ω @ 66A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3450pF @ 25V
Current - Continuous Drain (Id) @ 25°C	75A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Rise Time	95ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	67 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	75A
Threshold Voltage	2V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0065Ohm
Drain to Source Breakdown Voltage	55V
Pulsed Drain Current-Max (IDM)	440A
Avalanche Energy Rating (Eas)	250 mJ
Height	16.51mm
Length	10.67mm
Width	4.83mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant