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ATF-53189-TR1

Trans JFET 7V 300mA pHEMT 4-Pin(3+Tab) SOT-89 T/R


  • Manufacturer: Broadcom Limited
  • Origchip NO: 107-ATF-53189-TR1
  • Package: TO-243AA
  • Datasheet: -
  • Stock: 961
  • Description: Trans JFET 7V 300mA pHEMT 4-Pin(3+Tab) SOT-89 T/R (Kg)

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RFQ (Request for Quotations)

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IMPORTANT NOTICE

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2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.
transport

Details

Tags

Parameters
Factory Lead Time 6 Weeks
Package / Case TO-243AA
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 2 (1 Year)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated 7V
Additional Feature LOW NOISE
HTS Code 8541.21.00.75
Subcategory FET RF Small Signals
Current Rating (Amps) 300mA
Terminal Position SINGLE
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
Frequency 900MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-F3
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE
Operating Mode ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 135mA
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type pHEMT FET
Gain 17.2dB
Drain Current-Max (Abs) (ID) 0.3A
DS Breakdown Voltage-Min 7V
Power - Output 21.7dBm
FET Technology HIGH ELECTRON MOBILITY
Noise Figure 0.8dB
Voltage - Test 4V
Power Dissipation Ambient-Max 1W
RoHS Status RoHS Compliant
See Relate Datesheet
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