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2SC5095-R(TE85L,F)

Trans Gp Bjt NPN 10V 0.015A 3-PIN Usm T/r

Manufacturer: Toshiba Semiconductor and Storage
Origchip NO: 830-2SC5095-R(TE85L,F)
Package: SC-70, SOT-323
Datasheet: PDF
Stock: 108
Description: Trans Gp Bjt NPN 10V 0.015A 3-PIN Usm T/r (Kg)

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Details

Tags

Parameters
Factory Lead Time	16 Weeks
Contact Plating	Copper, Silver, Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Transistor Element Material	SILICON
Operating Temperature	125°C TJ
Packaging	Cut Tape (CT)
Published	2009
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	LOW NOISE
HTS Code	8541.21.00.75
Subcategory	Other Transistors
Max Power Dissipation	100mW
Terminal Position	DUAL
Terminal Form	GULL WING
Reach Compliance Code	unknown
Pin Count	3
JESD-30 Code	R-PDSO-G3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power - Max	100mW
Transistor Application	AMPLIFIER
Gain Bandwidth Product	10 GHz
Polarity/Channel Type	NPN
Transistor Type	NPN
Collector Emitter Voltage (VCEO)	10V
Max Collector Current	15mA
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 7mA 6V
Collector Emitter Breakdown Voltage	10V
Gain	13dB ~ 7.5dB
Transition Frequency	10000MHz
Max Breakdown Voltage	10V
Collector Base Voltage (VCBO)	20V
Emitter Base Voltage (VEBO)	1.5V
hFE Min	50
Highest Frequency Band	ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max	0.85pF
Noise Figure (dB Typ @ f)	1.8dB @ 2GHz
RoHS Status	RoHS Compliant