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2SC5087YTE85LF

Bipolar Transistors - BJT Radio-Freq Bipolar 80mA 150mW 12V

Manufacturer: Toshiba Semiconductor and Storage
Origchip NO: 830-2SC5087YTE85LF
Package: SC-61AA
Datasheet: -
Stock: 699
Description: Bipolar Transistors - BJT Radio-Freq Bipolar 80mA 150mW 12V (Kg)

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Details

Tags

Parameters
Factory Lead Time	11 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-61AA
Operating Temperature	125°C TJ
Packaging	Cut Tape (CT)
Published	2014
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Other Transistors
Max Power Dissipation	150mW
Element Configuration	Single
Power - Max	150mW
Gain Bandwidth Product	7 GHz
Polarity/Channel Type	NPN
Transistor Type	NPN
Collector Emitter Voltage (VCEO)	12V
Max Collector Current	80mA
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 20mA 10V
Collector Emitter Breakdown Voltage	12V
Gain	13dB
Transition Frequency	5000MHz
Max Breakdown Voltage	12V
Collector Base Voltage (VCBO)	20V
Emitter Base Voltage (VEBO)	3V
hFE Min	80
Noise Figure (dB Typ @ f)	1.1dB @ 1GHz
RoHS Status	RoHS Compliant