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2PB1219AS,115

2PB1219AS,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi


  • Manufacturer: Nexperia USA Inc.
  • Origchip NO: 554-2PB1219AS,115
  • Package: SC-70, SOT-323
  • Datasheet: PDF
  • Stock: 890
  • Description: 2PB1219AS,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available at Feilidi (Kg)

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Details

Tags

Parameters
Collector Emitter Breakdown Voltage 50V
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 500mA
Max Breakdown Voltage 50V
Frequency - Transition 140MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Supplier Device Package SC-70
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 200mW
Frequency 140MHz
Base Part Number 2PB1219
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 200mW
Power - Max 200mW
Gain Bandwidth Product 140MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 170 @ 150mA 10V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 30mA, 300mA
See Relate Datesheet
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