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2N7000-D26Z

ON SEMICONDUCTOR - 2N7000-D26Z - MOSFET, N CH, 60V, 0.2A, TO-92

Manufacturer: ON Semiconductor
Origchip NO: 598-2N7000-D26Z
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet: PDF
Stock: 523
Description: ON SEMICONDUCTOR - 2N7000-D26Z - MOSFET, N CH, 60V, 0.2A, TO-92 (Kg)

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Details

Tags

Parameters
Factory Lead Time	11 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	2N7000
JESD-30 Code	O-PBCY-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	400mW Ta
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V
Current - Continuous Drain (Id) @ 25°C	200mA Ta
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	0.2A
Drain-source On Resistance-Max	5Ohm
DS Breakdown Voltage-Min	60V
Feedback Cap-Max (Crss)	5 pF
RoHS Status	ROHS3 Compliant