SI4401DDY-T1-GE3

Introducing the SI4401DDY-T1-GE3, a highly efficient N-channel MOSFET designed for a wide range of applications. This advanced power transistor is built with the latest technology, guaranteeing optimal performance and reliability. The SI4401DDY-T1-GE3 features a low on-resistance of just 280 milliohms, allowing for high current handling capacity and reduced power dissipation. With a drain-source voltage rating of 30 volts, this MOSFET is suitable for a variety of voltage levels, making it versatile for different uses. Furthermore, this MOSFET is designed with a compact TO-252 packaging, allowing for easy integration onto circuit boards. Its compact size also makes it ideal for space-constrained applications, without compromising on performance. The SI4401DDY-T1-GE3 is built to withstand high-temperature environments, making it reliable and durable for a wide range of industrial and automotive applications. It is also RoHS compliant, ensuring it meets the highest industry standards. With its exceptional efficiency and robust design, the SI4401DDY-T1-GE3 is the perfect solution for your power transistor needs. Whether you're designing a motor control system, a power supply, or any other electronic application, this MOSFET delivers outstanding performance and reliability.