SI2308BDS-T1-GE3

The SI2308BDS-T1-GE3 is a high-performance N-channel MOSFET transistor from Vishay Siliconix. Designed for a wide range of applications, this transistor offers excellent switching characteristics, low on-resistance, and high power dissipation capabilities. With a maximum voltage rating of 30V and a continuous drain current of 5.5A, the SI2308BDS-T1-GE3 transistor is suitable for various power management and load-switching applications. It features a low on-resistance of only 42mΩ, minimizing power losses and ensuring efficient operation. This MOSFET transistor also boasts a fast switching speed, with a typical gate charge of 6.5nC and a high-speed switching time of 11ns. This makes it ideal for high-frequency applications where quick and precise switching is required. In addition to its performance characteristics, the SI2308BDS-T1-GE3 transistor is housed in a compact, industry-standard SOT-23 package, allowing for easy integration into existing designs. Furthermore, it operates over a wide temperature range of -55°C to +150°C, ensuring reliable performance even in harsh environments. Overall, the SI2308BDS-T1-GE3 transistor offers high performance, efficiency, and versatility, making it a reliable choice for a wide range of applications including power management, load switching, and high-frequency switching.