Introducing the MMBT3904LT1G, a high-performance NPN bipolar junction transistor (BJT) from our reputable product OEM. This compact and versatile component is designed for various applications, offering excellent amplification, switching, and digital logic capabilities. The MMBT3904LT1G is crafted with state-of-the-art technology, providing a reliable and efficient solution for your electronic circuit needs. With a maximum power dissipation of 350mW, it delivers optimal performance in a compact TO-236AB SOT-23 surface-mount package. This transistor operates with a voltage range of 40V and a collector current of up to 200mA, making it suitable for a wide range of low to medium power applications. Whether used in audio amplifiers, voltage regulators, or relay drivers, the MMBT3904LT1G ensures excellent signal amplification and smooth switching characteristics. Furthermore, this BJT has a high hFE value, ensuring accurate signal amplification with minimal distortion. Its low noise figure also enhances performance in low-level signal amplification applications. With its compact size, exceptional performance, and wide application range, the MMBT3904LT1G BJT is the ideal choice for engineers and hobbyists seeking reliable and high-quality transistors for their electronic projects.