IPB180P04P4L-02 Company

Introducing the IPB180P04P4L-02, a powerful and efficient power MOSFET from company. This high-performance MOSFET is designed for a wide range of applications including power supplies, motor control, and electronic loads. With a low on-state resistance of 1.8mΩ and a 40V drain-source voltage rating, this MOSFET is capable of handling high current loads with minimal power loss. Its advanced packaging technology also ensures excellent thermal performance, allowing for higher power densities and improved system reliability. The IPB180P04P4L-02 features a compact and lightweight design, making it ideal for space-constrained applications. Its low gate charge and fast switching characteristics further enhance its efficiency and performance. Overall, the IPB180P04P4L-02 offers designers a reliable and versatile solution for their power management needs, delivering a winning combination of high performance, compact size, and low power losses.