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The FDV303N is a high-performance n-channel MOSFET manufactured by Fairchild Semiconductor. This MOSFET is designed for applications requiring high-speed switching and low on-resistance. With a gate voltage of just 1.8V, the FDV303N offers a low on-resistance of 0.12 ohms, making it an ideal choice for battery-operated devices and other low-power applications. With a maximum drain current of 1.3A, the FDV303N is suitable for a wide range of switching and amplification tasks, including power management, battery charging, and load switching. Its compact SOT-23 package ensures easy integration into space-constrained PCB designs, while its low gate voltage requirement ensures compatibility with low-voltage control circuits. Overall, the FDV303N offers an excellent combination of performance, efficiency, and versatility, making it a strong contender for design engineers looking to optimize their electronic designs for low-power operation.

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