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Introducing the IPB180P04P4L-02, a high-performance power MOSFET from Infineon Technologies. This N-channel device is designed for automotive applications and offers a low on-state resistance of 1.8 mΩ, making it suitable for high current applications. The IPB180P04P4L-02 features a 40V drain-source voltage and a 180A continuous drain current, providing excellent power handling capabilities. Its advanced trench technology and optimized layout deliver reliable and efficient performance in harsh operating conditions. This power MOSFET is housed in a compact and thermally efficient PowerPAK SO-8 package, which ensures easy mounting and heat dissipation. With its high power density and rugged construction, the IPB180P04P4L-02 is an ideal choice for automotive powertrain, body control, and chassis applications. Trust Infineon's reputation for quality and innovation when you choose the IPB180P04P4L-02 for your power management needs. Contact us to learn more about this reliable and high-performance MOSFET.

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