Custom 2N7002LT1G agents

Introducing the 2N7002LT1G, a powerful and efficient enhancement mode MOSFET designed for a wide range of applications. This compact and versatile transistor is ideal for use in low voltage and low current circuits, offering high performance and reliability in a small package. With a maximum drain-source voltage of 60V and a continuous drain current of 115mA, the 2N7002LT1G is capable of handling a variety of tasks with ease. Its low threshold voltage and low on-resistance make it an excellent choice for use in switching and amplification circuits. Whether you're designing consumer electronics, automotive systems, or industrial controls, the 2N7002LT1G is a reliable and cost-effective solution for your semiconductor needs. With its compact footprint and high performance, this MOSFET is sure to become a valuable asset in your designs.