China IPB180P04P4L-02 Company

Introducing the China IPB180P04P4L-02, a high-performance power MOSFET designed for a wide range of applications including power supplies, motor control, and energy management systems. This MOSFET features a low on-state resistance, high switching speed, and low gate charge, making it an ideal choice for efficient power conversion. The IPB180P04P4L-02 offers a maximum drain-source voltage of 40V and a continuous drain current of 180A, ensuring reliable and stable performance under high-power conditions. Its compact and robust package design enhances thermal performance and reliability in various power applications. Equipped with advanced technology and high-quality materials, the China IPB180P04P4L-02 delivers excellent performance and long-term reliability, making it a preferred choice for engineers and designers seeking high-efficiency power transistors. Whether used in consumer electronics, industrial equipment, or automotive systems, this power MOSFET is sure to meet the demands of modern power management needs.