China 2N7002LT1G Exporter

Our 2N7002LT1G is a small signal N-channel MOSFET transistor, which is manufactured using a unique DMOS process with a high density cell design. This ensures high performance with low power loss and fast switching capabilities. It has a maximum drain current of 115mA and can handle a maximum drain-source voltage of 60V, making it suitable for a wide range of applications. This 2N7002LT1G is designed for use in general purpose switching and amplification applications, making it ideal for use in consumer electronics, industrial control, and automotive applications. It features a small SOT-23 surface mount package, making it easy to integrate into compact designs and saving valuable board space. With its excellent performance and compact form factor, the 2N7002LT1G is the ideal choice for engineers looking for a reliable and efficient MOSFET transistor for their designs. Whether it's for low power switching or amplification applications, this transistor is sure to meet your performance needs.