Introducing the cost-effective IPB180P04P4L-02, a powerful and efficient P-channel MOSFET designed for a wide range of applications. This high-performance MOSFET offers a low on-resistance of 4.1 mΩ and a maximum drain-source voltage of 40V, making it suitable for various power management tasks. With a compact and easy-to-mount package, this MOSFET is ideal for applications where space is limited. The IPB180P04P4L-02 is designed to provide high reliability and performance, ensuring stable and consistent operation in demanding conditions. Its low thermal resistance and excellent power handling capabilities make it suitable for a wide range of power management applications, including battery protection, voltage regulation, and motor control. With its excellent performance and competitive pricing, the IPB180P04P4L-02 is the ideal choice for engineers and designers looking to optimize their power management solutions without compromising on quality. Contact our authorized distributors to get access to this exceptional MOSFET and experience its superior performance firsthand.