2N7002LT1G reseller

Introducing the 2N7002LT1G, a high-performance N-channel enhancement mode Field-Effect Transistor (FET) designed for a wide range of applications. This versatile transistor offers excellent switching characteristics and low on-resistance, making it an ideal choice for a variety of electronic circuits. The 2N7002LT1G features a maximum drain-source voltage of 60 volts, allowing for reliable operation in both low and high voltage systems. With a low gate threshold voltage, this FET can easily be switched on and off by a low voltage signal, providing efficient power control. This compact and surface-mountable transistor comes in a small SOT-23 package, making it suitable for space-constrained PCB designs. The 2N7002LT1G has a high continuous drain current rating of 115mA, enabling it to handle demanding circuit requirements. Whether you are designing power management circuits, motor control applications, or switching circuits, the 2N7002LT1G is engineered to deliver superior performance and reliability. Trust in its high-quality construction and industry-leading specifications to meet your application needs.