Introducing the 2N7002LT1G, a highly efficient and versatile product by Company. Designed to meet the ever-increasing demands of the modern electronics industry, the 2N7002LT1G is a high-performance enhancement-mode N-channel MOSFET transistor. This compact yet powerful transistor offers a low threshold voltage and excellent switching characteristics, making it ideal for a wide range of applications including power management, load switching, and general-purpose amplification. With a voltage rating of 60V and a continuous drain current of 115mA, this transistor is capable of effectively handling various voltage and current loads. The 2N7002LT1G is manufactured using advanced technology that ensures reliability, durability, and consistent performance. Furthermore, it features a small and lightweight footprint, making it suitable for space-constrained applications. We at Company take pride in delivering high-quality electronic components, and the 2N7002LT1G is no exception. With its exceptional electrical and thermal properties, this transistor is guaranteed to elevate the performance and efficiency of your electronic designs. Trust the 2N7002LT1G for all your power management needs.