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11n120cnd Datasheet

Introducing the 11n120cnd, a powerful and efficient MOSFET designed for high voltage applications. This versatile device is capable of handling up to 1200 volts and offers a low on-resistance of just 0.11 ohms, making it ideal for use in various industrial and automotive applications. The 11n120cnd is built with advanced silicon technology, allowing for enhanced switching performance and improved overall efficiency. It features a high pulse current rating of up to 165 A, ensuring reliable operation even in demanding conditions. With its advanced design, this MOSFET delivers excellent thermal performance, thanks to its low thermal resistance and high thermal efficiency. This allows for efficient heat dissipation and supports sustained operation at high power levels. The 11n120cnd also benefits from advanced protection features, including gate-source ESD protection, gate oxide overvoltage protection, and a built-in gate resistor for enhanced reliability and safety. Overall, the 11n120cnd MOSFET offers a robust and reliable solution for high voltage applications. Its combination of high voltage capabilities, low on-resistance, and advanced protection features make it an ideal choice for a wide range of applications, including motor controls, power supplies, and inverters.

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