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VS-GB75YF120UT

VISHAY VS-GB75YF120UT IGBT Array & Module Transistor, NPN, 100 A, 3.8 V, 480 W, 1.2 kV, Module


  • Manufacturer: Vishay Semiconductor Diodes Division
  • Origchip NO: 884-VS-GB75YF120UT
  • Package: Module
  • Datasheet: PDF
  • Stock: 978
  • Description: VISHAY VS-GB75YF120UT IGBT Array & Module Transistor, NPN, 100 A, 3.8 V, 480 W, 1.2 kV, Module (Kg)

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Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mount Chassis Mount, PCB, Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 33
Operating Temperature 150°C TJ
Published 2011
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 480W
Polarity NPN
Power - Max 480W
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 100A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 3.8V
Vce(on) (Max) @ Vge, Ic 4.5V @ 15V, 100A
NTC Thermistor Yes
Height 13.2mm
Length 107.8mm
Width 45.4mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
See Relate Datesheet
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